Applied Materials, Inc.
ULTRA-THIN FILMS WITH TRANSITION METAL DICHALCOGENIDES

Abstract:

Methods for selectively forming a transition metal dichalcogenide (TMDC) film comprise exposing a substrate comprising a silicon oxide-based surface and a tungsten (W) segment to a sulfur source to selectively form the transition metal dichalcogenide film with the tungsten segment relative to the silicon oxide-based surface. Chemical vapor deposition (CVD) at a temperature in a range of 350.degree. C. to 600.degree. C. is used to form the TMDC film. CVD may be conducted by low pressure CVD (LPCVD) or atmospheric pressure CVD (APCVD). Methods of making devices incorporating the TMDC films are also provided.