Applied Materials, Inc.
DIELECTRIC COATING FOR DEPOSITION CHAMBER

Abstract:

Exemplary methods of semiconductor processing may include forming a first plasma of a silicon-containing precursor and an oxygen-containing precursor within a processing region of a semiconductor processing chamber. The methods may also include depositing a coating from first effluents of the first plasma on surfaces defining the processing region to a target thickness greater than or about 0.5 .mu.m. Forming the first plasma may occur at a first power greater than or about 300 W. The surfaces defining the processing region may include a surface of a faceplate that faces the processing region.