Applied Materials, Inc.
Horizontal gate all around device nanowire air gap spacer formation

Abstract:

Embodiments provide apparatuses and methods for forming nanowire structures with desired materials horizontal gate-all-around (hGAA) structures field effect transistor (FET) for semiconductor chips. In one embodiments, a nanowire structure is provided and includes a stack containing repeating pairs of a first layer and a second layer and having a first side and a second side opposite from the first side, a gate structure surrounding the stack, a source layer adjacent to the first side, and a drain layer adjacent to the second side. The stack also contains one or more gaps disposed between the source layer and the second layer and having a dielectric constant value of about 1 and one or more gaps disposed between the drain layer and the second layer and having a dielectric constant value of about 1.