Applied Materials, Inc.
LOW CURRENT HIGH ION ENERGY PLASMA CONTROL SYSTEM

Abstract:

Exemplary semiconductor processing systems may include a processing chamber, an inductively coupled plasma (ICP) source disposed in or on the processing chamber, and a support configured to position a substrate. The support can be disposed at least partially within the processing chamber and can include a bias electrode. An ion screen may be disposed within the chamber to be above a substrate on the support. The ion screen is semitransparent to ions and electrons so that the density of plasma sustained above the ion screen is unaffected by RF bias power applied to the bias electrode. Plasma energy control is therefore accomplished while maintaining independence of plasma density from RF bias power so that high ion energy and low bias current may be afforded.