Applied Materials, Inc.
Conformal high concentration boron doping of semiconductors

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Abstract:

Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

Status:
Grant
Type:

Utility

Filling date:

18 Jun 2019

Issue date:

10 May 2022