Applied Materials, Inc.
Conformal high concentration boron doping of semiconductors
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Abstract:
Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.
Status:
Grant
Type:
Utility
Filling date:
18 Jun 2019
Issue date:
10 May 2022