Applied Materials, Inc.
CONFORMAL SILICON OXIDE FILM DEPOSITION

Abstract:

Methods for depositing a silicon-containing film on a substrate are described. The method comprises heating a processing chamber to a temperature greater than or equal to 200.degree. C.; maintaining the processing chamber at a pressure of less than or equal to 300 Torr; coflowing a silicon precursor and nitrous oxide (N.sub.2O) into the processing chamber, and depositing a conformal silicon-containing film on the substrate. The silicon-containing film has dielectric constant (k-value) in a range of from about 3.8 to about 4.0, has a breakdown voltage of greater than 8 MV/cm at a leakage current of 1 mA/cm.sup.2 and has a leakage current of less than 1 nA/cm.sup.2 at 2 MV/cm.