Applied Materials, Inc.
DIRECTIONAL MODIFICATION OF PATTERNING STRUCTURE TO ENHANCE PATTERN ELONGATION PROCESS MARGIN

Abstract:

A method for patterning structures including providing a layer stack having a plurality of device layers and a hardmask layer disposed in a stacked arrangement, the layer stack having a plurality of trenches formed therein, the trenches extending through the hardmask layer and into at least one of the device layers, the trenches having lateral sidewalls with a first slope relative to a plane perpendicular to upper surfaces of the device layers, and performing a sputter etching process wherein ion beams are directed toward the hardmask layer to etch the hardmask layer and cause etched material from the hardmask layer to be redistributed along the lateral sidewalls of the trenches to provide the lateral sidewalls with a second slope relative to the plane perpendicular to the upper surfaces of the device layers, the second slope less than the first slope.