Applied Materials, Inc.
SEMICONDUCTOR PROCESSING APPARATUS FOR HIGH RF POWER PROCESS

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Abstract:

In some embodiments, the semiconductor process apparatus comprises a conductive support comprising mesh, a conductive shaft comprising a conductive rod, and a plurality of connection elements. The plurality of connection elements are coupled to the mesh in parallel and are connected to the rod at a single junction. The plurality of connection elements help spread RF current, reducing localized heating in the substrate, resulting in a more uniform film deposition. Additionally, using connection elements that are merged and coupled to a single RF rod allow for the rod to be made of materials that can conduct RF current at lower temperatures.

Status:
Application
Type:

Utility

Filling date:

22 Feb 2022

Issue date:

9 Jun 2022