Applied Materials, Inc.
HORIZONTAL GATE-ALL-AROUND DEVICE NANOWIRE AIR GAP SPACER FORMATION

Abstract:

Embodiments provide methods for forming nanowire structures, such as, for example, horizontal gate-all-around (hGAA) structures. In one embodiment, a method includes selectively etching material from a stack disposed on a material layer located on a substrate with a plasma to create recesses on each of first and second sides of the stack and depositing a dielectric material on the first and second sides. The stack includes repeating pairs of first and second layers. The method also includes removing the dielectric material from the first and second sides, where the dielectric material remains in the recesses of the first and second sides, and selectively depositing a stressor layer on regions of the first and second sides which are unprotected by the dielectric material to form gaps between the stressor layer and the dielectric material remaining in the recesses of the first and second sides.