Applied Materials, Inc.
Low-k films

Abstract:

Methods for plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) ##STR00001## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, and R.sup.6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.