Applied Materials, Inc.
PLASMA ENHANCED DEPOSITION OF SILICON-CONTAINING FILMS AT LOW TEMPERATURE

Abstract:

Exemplary deposition methods may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. The method may include striking a plasma in the processing region between a faceplate and a pedestal of the semiconductor processing chamber. The pedestal may support a substrate including a patterned photoresist. The method may include maintaining a temperature of the substrate less than or about 200.degree. C. The method may also include depositing a silicon-containing film along the patterned photoresist.