Applied Materials, Inc.
SILICON CARBIDE COATED BASE SUBSTRATES, SILICON CARBIDE SUBSTRATES THEREOF, AND METHODS THEREOF

Abstract:

Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800.degree. C. to less than 1,000.degree. C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000.degree. C. to about 1,400.degree. C. to form a second silicon carbide layer on the first silicon carbide layer.