Applied Materials, Inc.
Metal line patterning

Abstract:

Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include a method may include providing a semiconductor device including plurality of patterning structures over a device stack, each of the plurality of patterning structures including a first sidewall, a second sidewall, and an upper surface. The method may further include forming a seed layer along just the first sidewall and the upper surface of each of the plurality of patterning structures, forming a metal layer atop the seed layer, forming a fill material between each of the plurality of patterning structures, and removing the plurality of patterning structures.