Applied Materials, Inc.
THRESHOLD VOLTAGE MODULATION FOR GATE-ALL-AROUND FET ARCHITECTURE

Abstract:

A method of forming a gate stack structure includes forming a dipole metal layer on a high-.kappa. gate dielectric layer on a semiconductor structure formed on a substrate, annealing the dipole metal layer, and removing the dipole metal layer. The dipole metal layer comprises dopants in the high-.kappa. gate dielectric layer.