Applied Materials, Inc.
Patterning scheme to improve EUV resist and hard mask selectivity

Abstract:

Methods and film stacks for extreme ultraviolet (EUV) lithography are described. The film stack comprises a substrate with a hard mask, bottom layer, middle layer and photoresist. Etching of the photoresist is highly selective to the middle layer and a modification of the middle layer allows for a highly selective etch relative to the bottom layer.