Applied Materials, Inc.
METHODS FOR FORMING IMPURITY FREE METAL ALLOY FILMS

Abstract:

Methods of depositing a metal film by exposing a substrate surface to a halide precursor and an organosilane reactant are described. The halide precursor comprises a compound of general formula (I): MQ.sub.zR.sub.m, wherein M is a metal, Q is a halogen selected from Cl, Br, F or I, z is from 1 to 6, R is selected from alkyl, CO, and cyclopentadienyl, and m is from 0 to 6. The aluminum reactant comprises a compound of general formula (II) or general formula (III): ##STR00001## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, R.sup.8, R.sup.a, R.sup.b, R.sup.c, R.sup.d, R.sup.e, and R.sup.f are independently selected from hydrogen (H), substituted alkyl or unsubstituted alkyl; and X, Y, X', and Y' are independently selected from nitrogen (N) and carbon (C).