Applied Materials, Inc.
CAPACITOR DIELECTRIC FOR SHORTER CAPACITOR HEIGHT AND QUANTUM MEMORY DRAM

Abstract:

Embodiments of the present disclosure generally relate to methods of forming a capacitor for DRAM. The method begins by preparing a substrate for forming the capacitor. A bottom electrode is formed on the top surface of the substrate. A dielectric layer is formed in contact with the bottom electrode. The material of the dielectric layer is one of a barium titanate, BaTiO.sub.3 (BTO) strontium titanate, SrTiO.sub.3 (STO), barium strontium titanate, BaSrTiO.sub.3 (BSTO), ZrSTO, ZrBTO, or ZrBSTO. A top electrode is formed on the dielectric layer and then a cap is formed on the top electrode.