Applied Materials, Inc.
Method of reducing effective oxide thickness in a semiconductor structure

Abstract:

Methods and apparatus for forming a semiconductor structure with a scaled effective oxide thickness is disclosed. In embodiments, a method includes depositing amorphous silicon capping layer having a first surface atop a first surface of a titanium nitride (TiN) layer, wherein the titanium nitride layer is atop a first surface of a high-k dielectric layer disposed within a film stack; contacting the first surface of the amorphous silicon capping layer with a nitrogen containing gas; and annealing the film stack.