Applied Materials, Inc.
Method of growing doped group IV materials

Abstract:

Methods for forming films during semiconductor device fabrication by soaking a substrate in dopant are discussed herein. The dopant soak is performed in a process chamber using at least one dopant precursor for a predetermined period of time to form a dopant layer on the substrate. The process chamber is subsequently purged of the at least one dopant precursor. At least one film precursor is introduced into the process chamber after the process chamber is purged. A film is epitaxially formed on the substrate to have at least one of a target resistivity, dopant concentration, and/or thickness. Post-processing operations can include annealing or patterning the semiconductor film, or depositing additional layers thereon.