Applied Materials, Inc.
Gate all-around device

Abstract:

Gate all-around devices are disclosed in which an angled channel comprising a semiconducting nanostructure is located between a source and a drain. The angled channel has an axis that is oriented at an angle to the top surface of the substrate at an angle in a range of about 1.degree. to less than about 90.degree.. The gate all-around device is intended to meet design and performance criteria for the 7 nm technology generation.