Applied Materials, Inc.
Method of forming conformal epitaxial semiconductor cladding material over a fin field effect transistor (FINFET) device

Abstract:

The present disclosure generally relates to devices having conformal semiconductor cladding materials, and methods of forming the same. The cladding material is a silicon germanium epitaxial material. The cladding material is capable of being deposited to a thickness which is less than cladding materials formed by conventional deposition/etch techniques.