Applied Materials, Inc.
Contact integration and selective silicide formation methods

Abstract:

Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550.degree. C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes.