Applied Materials, Inc.
Doping control of metal nitride films
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Abstract:
Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.
Status:
Grant
Type:
Utility
Filling date:
20 Aug 2019
Issue date:
2 Feb 2021