Applied Materials, Inc.
Method for copper plating through silicon vias using wet wafer back contact
Last updated:
Abstract:
A method and apparatus for processing a substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon contact surface and exposing the substrate to an electroplating process by flowing a current through a backside of the substrate to form a metal layer on the metal seed layer.
Status:
Grant
Type:
Utility
Filling date:
27 May 2014
Issue date:
29 Dec 2020