Applied Materials, Inc.
Controlled etch of nitride features

Abstract:

Methods of etching a semiconductor substrate may include applying an etchant to the semiconductor substrate. The semiconductor substrate may include an exposed region of an oxygen-containing material and an exposed region of a nitrogen-containing material. The methods may include heating the semiconductor substrate from a first temperature to a second temperature. The methods may include maintaining the semiconductor substrate at the second temperature for a period of time sufficient to perform an etch of the nitrogen-containing material relative to the oxygen-containing material. The methods may also include quenching the etch subsequent the period of time.