Applied Materials, Inc.
Silicide Films Through Selective Deposition

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Abstract:

Methods for forming silicide films are disclosed. Methods of selectively depositing metal-containing films on silicon surfaces which are further processed to form silicide films are disclosed. Specific embodiments of the disclosure relate to the formation of silicide films on FinFET structures without the formation of a metal layer on the dielectric.

Status:
Grant
Type:

Utility

Filling date:

10 Mar 2021

Issue date:

1 Jul 2021