Applied Materials, Inc.
OXYGEN RADICAL ASSISTED DIELECTRIC FILM DENSIFICATION

Abstract:

Embodiments herein provide for oxygen radical based treatment of silicon containing material layers deposited using a flowable chemical vapor deposition (FCVD) process. Oxygen radical based treatment of the FCVD deposited silicon containing material layers desirably increases the number of stable Si--O bonds, removes undesirably hydrogen and nitrogen impurities, and provides for further densification and excellent film quality in the treated silicon containing material layers. Embodiments include methods and apparatus for making a semiconductor device including: contacting a flowable layer of silicon containing material disposed on a substrate with a plurality of oxygen radicals under conditions sufficient to anneal and increase the density of the flowable layer of silicon containing material.