Applied Materials, Inc.
LOW VOLATILITY MATERIAL REMOVAL FROM A SEMICONDUCTOR DEVICE

Abstract:

Disclosed herein are methods of removing material, such as processing byproducts from a semiconductor device. In one approach, the method includes providing a wafer adjacent a halo, wherein the wafer and the halo are disposed within a chamber, and wherein the wafer includes a first wafer edge and a second wafer edge, moving the wafer and the ion source relative to one another, and varying at least one of the following processing parameters as the ion source passes the first wafer edge or the second wafer edge: a scan speed, a temperature at the halo and the wafer, a gas flow rate of the ion source, and a power of the ion source.