Applied Materials, Inc.
PMOS High-K Metal Gates

Abstract:

Metal gate stacks and integrated methods of forming metal gate stacks are disclosed. Some embodiment comprise MoN as a PMOS work function material. Some embodiments comprise TiSiN as a high-.kappa. capping layer. Some embodiments provide improved PMOS bandedge performance. Some embodiments provide improved PMOS bandedge performance with reduced EOT penalty.