Applied Materials, Inc.
SURFACE ENCASING MATERIAL LAYER

Abstract:

Exemplary deposition methods may include delivering a silicon-containing precursor and a carrier precursor to a processing region of a semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor and the carrier precursor within the processing region of the semiconductor processing chamber. The methods may include depositing a first amount of a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The depositing may occur at a first chamber pressure. The methods may include adjusting the first chamber pressure to a second chamber pressure less than the first chamber pressure. The methods may include depositing a second amount of the silicon-containing material on the first amount of the silicon-containing material.