Applied Materials, Inc.
MATCHING PROCESS CONTROLLERS FOR IMPROVED MATCHING OF PROCESS

Abstract:

A method includes identifying first parameters of a first processing chamber of a semiconductor fabrication facility. The first parameters include first input parameters and first output parameters. The method further includes identifying second parameters of a second processing chamber of the semiconductor fabrication facility. The second parameters include second input parameters and second output parameters. The method further includes generating, by a processing device based on the first parameters and the second parameters, composite parameters comprising composite input parameters and composite output parameters. Semiconductor fabrication is based on the composite parameters.