Applied Materials, Inc.
NOVEL METHOD FOR GATE INTERFACE ENGINEERING

Abstract:

Processing methods may be performed to produce semiconductor structures that may include a high-k dielectric material. The methods may include removing a native oxide from a surface of a substrate. The methods may include delivering nitrous oxide to the substrate and thermally annealing the surface to form an oxide-containing interface. The methods may include delivering a nitrogen-containing precursor or an oxygen-containing precursor to a substrate contained in a semiconductor processing chamber. The methods may include forming reactive ligands on an exposed surface of the substrate with the nitrogen-containing precursor or the oxygen-containing precursor. The methods may also include forming a high-k dielectric material overlying the substrate.