Applied Materials, Inc.
METHOD OF CREATING CIGS PHOTODIODE FOR IMAGE SENSOR APPLICATIONS

Abstract:

Embodiments disclosed herein include photodiodes and methods of forming such photodiodes. In an embodiment, a method of creating a photodiode, comprises disposing an absorber layer over a first contact, wherein the absorber layer comprises a first conductivity type, and disposing a semiconductor layer over the absorber, wherein the semiconductor layer has a second conductivity type that is opposite from the first conductivity type. In an embodiment, the method further comprises disposing a hole blocking layer over the semiconductor layer, wherein the hole blocking layer is formed with a reactive sputtering process with a processing gas that comprises oxygen, and disposing a second contact over the hole blocking layer.