Applied Materials, Inc.
PROCESS TO IMPROVE INTERFACE STATE DENSITY Dit ON DEEP TRENCH ISOLATION (DTI) FOR CMOS IMAGE SENSOR

Abstract:

Embodiments disclosed herein include CMOS image sensors and methods of forming such devices. In an embodiment, a method of forming a CMOS image sensor comprises pressurizing a chamber with a gas comprising hydrogen, and annealing a substrate in the pressurized chamber. In an embodiment the substrate comprises the CMOS image sensor. In an embodiment, the CMOS image sensor comprises a semiconductor body and a trench around a perimeter the semiconductor body, wherein the trench is filled with a high-k oxide that directly contacts the semiconductor body. In an embodiment, the method further comprises, depressurizing the chamber.