Applied Materials, Inc.
Low-K Dielectric Films

Abstract:

Methods for deposition of high-hardness low-.kappa. dielectric films are described. More particularly, a method of processing a substrate is provided. The method includes flowing a precursor-containing gas mixture into a processing volume of a processing chamber having a substrate, the precursor having the general formula (I) ##STR00001## wherein R.sup.1, R.sup.2, R.sup.3, R.sup.4, R.sup.5, R.sup.6, R.sup.7, and R.sup.8 are independently selected from hydrogen (H), alkyl, alkoxy, vinyl, silane, amine, or halide; maintaining the substrate at a pressure in a range of about 0.1 mTorr and about 10 Torr and at a temperature in a range of about 200.degree. C. to about 500.degree. C.; and generating a plasma at a substrate level to deposit a dielectric film on the substrate.