Advanced Micro Devices, Inc.
NWELL AND SUBTRATE TAPS IN MEMORY LAYOUT

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Abstract:

A circuit includes a repeating series of first circuits and a repeating series of second circuits placed next to the repeating series of first circuits and interacts with corresponding portions of the first circuits in the series. The repeating series of second circuits is formed in diffusion regions and diffusion wells which extend along the direction in which the second circuits repeat. The repeating series of the first and second circuits is interrupted by at least one dummy circuit region, which occupies the space of one or more instances of the first and second repeating series. The dummy circuit region also includes taps for biasing the diffusion regions and diffusion wells of the second circuits.

Status:
Application
Type:

Utility

Filling date:

27 Jun 2019

Issue date:

22 Oct 2020