Advanced Micro Devices, Inc.
STANDARD CELL LAYOUT ARCHITECTURES AND DRAWING STYLES FOR 5NM AND BEYOND
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Abstract:
A system and method for efficiently creating layout for a standard cell are described. A standard cell to be used for an integrated circuit uses a full trench silicide strap as drain regions for a pmos transistor and an nmos transistor. Multiple unidirectional routes in metal zero are placed across the standard cell where each route connects to a trench silicide contact. Power and ground connections utilize pins rather than end-to-end rails in the standard cell. Additionally, intermediate nodes are routed in the standard cell with unidirectional routes.
Status:
Application
Type:
Utility
Filling date:
10 Dec 2021
Issue date:
31 Mar 2022