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INTEGRATED CIRCUIT STRUCTURE WITH DIELECTRIC MATERIAL TO COVER HORIZONTALLY SEPARATED METAL LAYERS, AND RELATED METHOD

Abstract:

Embodiments of the disclosure provide an integrated circuit (IC) structure. The IC structure may include a first metal layer on a substrate, and a second metal layer on the substrate that is horizontally separated from the first metal layer. A dielectric material may include a first portion on the first metal layer, and having a first upper surface, a second portion on the second metal layer, and having a second upper surface, and a third portion on the substrate between the first metal layer and the second metal layer. The third portion of the dielectric material includes a third upper surface above the first upper surface of the first portion and the second upper surface of the second portion of the dielectric material.