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Silicided source/drain terminals for field-effect transistors

Abstract:

Structures including field-effect transistors and methods of forming a structure including field-effect transistors. A first field-effect transistor includes a first source/drain terminal and a second source/drain terminal, and a second field-effect transistor includes a third source/drain terminal and a fourth source/drain terminal. The first source/drain terminal and the second source/drain terminal each include a fully-silicided section located at and above a top surface of a semiconductor layer. The third source/drain terminal and the fourth source/drain terminal each include a partially-silicided section located over the top surface of the semiconductor layer.