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Well contact cell with doped tap region separated from active region, and methods to form same

Abstract:

The disclosure provides integrated circuit (IC) layouts and methods to form the same. An IC layout may include two standard cells, with a well contact cell laterally between them. The well contact cell may include a single semiconductor region having the first doping type, an active bridge region within the single semiconductor region, extending continuously from the first active region of the first standard cell to the third active region of the second standard cell. A doped tap region within the single semiconductor region is laterally separated from the active bridge region. The doped tap region is laterally aligned with the second active region and the fourth active region.