Alpha and Omega Semiconductor Limited
MOS device with island region
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Abstract:
A semiconductor device formed on a semiconductor substrate includes: an epitaxial layer overlaying the semiconductor substrate; a drain formed on back of the semiconductor substrate; a drain region that extends into the epitaxial layer; an active region comprising: a body disposed in the epitaxial layer; a source embedded in the body; a gate trench extending into the epitaxial layer; a gate disposed in the gate trench; an active region contact trench extending through the source and the body; and an active region contact electrode disposed within the active region contact trench; and an island region under the active region contact trench and disconnected from the body, the island region having an opposite polarity as the epitaxial layer; wherein the active region contact trench has a non-uniform depth.
Utility
5 Dec 2019
13 Apr 2021