ASML Holding N.V.
Deflection scan speed adjustment during charged particle exposure

Abstract:

A method for exposing a wafer in a charged particle lithography system. The method comprises generating a plurality of charged particle beamlets, the beamlets arranged in groups, each group comprising an array of beamlets; moving the wafer under the beamlets in a first direction at a wafer scan speed; deflecting the beamlets in a second direction substantially perpendicular to the first direction at a deflection scan speed, and adjusting the deflection scan speed to adjust a dose imparted by the beamlets on the wafer.