ASML Holding N.V.
Membrane for EUV lithography

Last updated:

Abstract:

A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.

Status:
Grant
Type:

Utility

Filling date:

2 Dec 2016

Issue date:

3 May 2022