ASML Holding N.V.
Lithographic patterning process and resists to use therein

Abstract:

A resist composition is disclosed which comprises a perovskite material with a structure having a chemical formula selected from ABX.sub.3, A.sub.2BX.sub.4, or ABX.sub.4, wherein A is a compound containing an NH.sub.3 group, B is a metal and X is a halide constituent. The perovskite material may comprise one or more of the following components: halogen-mixed perovskite material; metal-mixed perovskite material, and organic ligand mixed perovskite material.