AXT, Inc.
Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant

Abstract:

Methods and systems for low etch pit density gallium arsenide crystals with boron dopant may include a gallium arsenide single crystal wafer having boron as a dopant, an etch pit density of less than 500 cm.sup.-2, and optical absorption of 6 cm.sup.-1 or less at 940 nm. The wafer may have an etch pit density of less than 200 cm.sup.-2. The wafer may have a diameter of 6 inches or greater. The wafer may have a boron concentration between 1.times.10.sup.19 cm.sup.-3 and 2.times.10.sup.19 cm.sup.-3. The wafer may have a thickness of 300 .mu.m or greater. Optoelectronic devices may be formed on a first surface of the wafer, which may be diced into a plurality of die and optical signals from an optoelectronic device on one side of one of the die may be communicated out a second side of the die opposite to the one side.