The Boeing Company
Optoelectric devices comprising hybrid metamorphic buffer layers

Abstract:

In one aspect, semiconductor structures are described herein. A semiconductor structure, in some implementations, comprises a first semiconductor layer having a first bandgap and a first lattice constant and a second semiconductor layer having a second bandgap and a second lattice constant. The second lattice constant is lower than the first lattice constant. Additionally, a transparent metamorphic buffer layer is disposed between the first semiconductor layer and the second semiconductor layer. The buffer layer has a constant or substantially constant bandgap and a varying lattice constant. The varying lattice constant is matched to the first lattice constant adjacent the first semiconductor layer and matched to the second lattice constant adjacent the second semiconductor layer. The buffer layer comprises a first portion comprising Al.sub.yGa.sub.zIn.sub.(1-y-z)As and a second portion comprising Ga.sub.xIn.sub.(1-x)P. The first portion is adjacent the first semiconductor layer and the second portion is adjacent the second semiconductor layer.