BlackBerry Limited
METHOD AND APPARATUS FOR COMPENSATING FOR HIGH THERMAL EXPANSION COEFFICIENT MISMATCH OF A STACKED DEVICE

Abstract:

A device that incorporates teachings of the subject disclosure may include, for example, a multilayer initial oxide on a silicon substrate, where the multilayer initial oxide comprises amorphous polysilicates and a group one metal or a group two metal; a first electrode layer on the multilayer initial oxide; a dielectric layer on the first electrode layer; a second electrode layer on the dielectric layer, where an edge alignment spacing between at least one pair of corresponding electrode edges of two electrode layers of the capacitor is two microns or less; and connections for the first and second electrode layers. Other embodiments are disclosed.