The Chemours Company
LOW STRESS MOISTURE RESISTANT STRUCTURE OF SEMICONDUCTOR DEVICE

Abstract:

A low stress moisture resistant structure of semiconductor device comprises a low stress moisture resistant layer, wherein a semiconductor device is formed on a semiconductor wafer, the semiconductor device comprises at least one pad, the low stress moisture resistant layer is coated on the semiconductor device and the semiconductor wafer so that a pad top center surface of the pad is exposed. The low stress moisture resistant layer comprises a material comprising crosslinked fluoropolymer. A before-coated stress measured on the semiconductor wafer before the low stress moisture resistant layer is coated and an after-cured stress measured on the semiconductor wafer after the low stress moisture resistant layer is coated and cured define a stress difference, the stress difference is greater than or equal to -5.times.10.sup.7 dyne/cm.sup.2 and less than or equal to 5.times.10.sup.7 dyne/cm.sup.2.