CMC Materials, Inc.
TITANIUM DIOXIDE CONTAINING RUTHENIUM CHEMICAL MECHANICAL POLISHING SLURRY

Abstract:

A chemical mechanical polishing composition for polishing a ruthenium containing substrate comprises, consists of, or consists essentially of a water based liquid carrier; titanium oxide particles dispersed in the liquid carrier, the titanium oxide particles including rutile and anatase such that an x-ray diffraction pattern of the titanium oxide particles has a ratio X:Y greater than about 0.05, wherein X represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.24 .ANG. and Y represents an intensity of a peak in the x-ray diffraction pattern having a d-spacing of about 3.51 .ANG.; and a pH in a range from about 7 to about 10. Optional embodiments further include a pH buffer having a pK.sub.a in a range from about 6 to about 9.