Cree, Inc.
POWER SEMICONDUCTOR DEVICES HAVING MULTILAYER GATE DIELECTRIC LAYERS THAT INCLUDE AN ETCH STOP/FIELD CONTROL LAYER AND METHODS OF FORMING SUCH DEVICES

Abstract:

A semiconductor device includes a semiconductor layer structure that comprises silicon carbide, a gate dielectric layer on the semiconductor layer structure, the gate dielectric layer including a base gate dielectric layer that is on the semiconductor layer structure and a capping gate dielectric layer on the base gate dielectric layer opposite the semiconductor layer structure, and a gate electrode on the gate dielectric layer opposite the semiconductor layer structure. A dielectric constant of the capping gate dielectric layer is higher than a dielectric constant of the base gate dielectric layer.